Title :
Room temperature performance of low threshold 1.34-1.44-μm GaInNAs-GaAs quantum-well lasers grown by molecular beam epitaxy
Author :
Hierro, A. ; Ulloa, J.M. ; Calleja, E. ; Damilano, B. ; Barjon, J. ; Duboz, J.-Y. ; Massies, J.
Author_Institution :
ISOM-Univ. Politecnica de Madrid, Spain
fDate :
6/1/2005 12:00:00 AM
Abstract :
Room temperature lasing emission at 1.338 and 1.435 μm with threshold current densities of 1518 and 1755 A/cm2, respectively, is obtained in broad area GaInNAs-GaAs laser diodes (LDs) grown by molecular beam epitaxy. The 1.338-μm LDs show a power output per facet up to 0.20 W/A, a characteristic temperature (T0) of 78 K, and an external transparency current density (J/sub tr/) of 0.77 kA/cm2. Increasing the lasing wavelength to 1.435 μm results in a larger J/sub tr/ of 1.16 kA/cm2 and a lower T0 of 62 K, due to larger nonradiative recombination. However, the 1.435-μm LDs still display a power output per facet up to 0.15 W/A, and a high internal quantum efficiency of 52%. These improved performances are achieved without the need to use strain compensation layers, Sb as a surfactant during the quantum-well growth, or a postgrowth thermal anneal cycle.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; stimulated emission; transparency; 1.338 mum; 1.34 to 1.44 mum; 1.435 mum; 293 to 298 K; 62 K; 78 K; GaInNAs-GaAs; GaInNAs-GaAs lasers; external current density; internal quantum efficiency; laser diodes; lasing emission; low threshold lasers; molecular beam epitaxy; nonradiative recombination; quantum well lasers; room temperature performance; threshold current densities; transparency; Capacitive sensors; Current density; Diode lasers; Displays; Molecular beam epitaxial growth; Quantum well lasers; Quantum wells; Radiative recombination; Temperature; Threshold current; 1.45-; GaInNAs; molecular beam epitaxy (MBE); quantum-well (QW) lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.846567