High-performance laser diodes with emission wavelengths above 1100 nm and very small vertical divergence of the far field

Author

Bugge, F. ; Wenzel, H. ; Sumpf, B. ; Erbert, G. ; Weyers, M.

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany

Volume

17

Issue

6

fYear

2005

fDate

6/1/2005 12:00:00 AM

Firstpage

1145

Lastpage

1147

Abstract

The effect of variations in the vertical structure on the performance of AlGaAs-GaAs laser diodes with an InGaAs quantum well (QW) emitting around 1120 nm was investigated. With very thick waveguide layers, more than 95% of the output power is enclosed in an angle smaller than 35/spl deg/. This allows the use of fast axis collimators with a small numerical aperture. Broad area laser diodes with 100-μm stripe width, an optimized doping profile, and a double QW emit more than 12 W and show reliable operation at 5 W.

Keywords

III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; indium compounds; optical collimators; quantum well lasers; semiconductor device reliability; semiconductor epitaxial layers; stimulated emission; waveguide lasers; 100 mum; 1120 nm; 5 W; AlGaAs-GaAs; AlGaAs-GaAs laser diodes; InGaAs; InGaAs quantum well; broad area laser diodes; far field vertical divergence; fast axis collimators; high-performance laser diodes; laser emission; optimized doping profile; reliable laser operation; small numerical aperture; thick waveguide layers; very small vertical divergence; Diode lasers; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Power generation; Pump lasers; Quantum well lasers; Semiconductor lasers; Stimulated emission; Temperature; Epitaxial growth; laser reliability; quantum well (QW) lasers; semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.846927

Filename

1432757