DocumentCode
814271
Title
Comments on "Ill conditioning in self-heating FET models" [and reply]
Author
Parker, Anthony E. ; Maas, S.
Author_Institution
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
Volume
12
Issue
9
fYear
2002
Firstpage
351
Lastpage
352
Abstract
A recent letter by S.A. Maas (see ibid., vol.12, no.3, p.88-9, March 2002) reported ill conditioning in nonlinear circuit simulators caused by the introduction of self-heating effects into FET models. This is true for circumstances outlined in that work but is a consequence of using an incomplete thermal model. This letter points out that an account for both thermal potential and mobility variation with temperature will eliminate the problem.
Keywords
field effect transistors; semiconductor device models; FET models; ill conditioning; mobility variation; nonlinear circuit simulators; self-heating effects; thermal model; thermal potential; Circuit simulation; Equations; Microwave FETs; Microwave devices; Nonlinear circuits; Temperature dependence; Thermal resistance;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2002.803141
Filename
1031931
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