Title :
Comments on "Ill conditioning in self-heating FET models" [and reply]
Author :
Parker, Anthony E. ; Maas, S.
Author_Institution :
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
Abstract :
A recent letter by S.A. Maas (see ibid., vol.12, no.3, p.88-9, March 2002) reported ill conditioning in nonlinear circuit simulators caused by the introduction of self-heating effects into FET models. This is true for circumstances outlined in that work but is a consequence of using an incomplete thermal model. This letter points out that an account for both thermal potential and mobility variation with temperature will eliminate the problem.
Keywords :
field effect transistors; semiconductor device models; FET models; ill conditioning; mobility variation; nonlinear circuit simulators; self-heating effects; thermal model; thermal potential; Circuit simulation; Equations; Microwave FETs; Microwave devices; Nonlinear circuits; Temperature dependence; Thermal resistance;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2002.803141
