• DocumentCode
    814271
  • Title

    Comments on "Ill conditioning in self-heating FET models" [and reply]

  • Author

    Parker, Anthony E. ; Maas, S.

  • Author_Institution
    Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
  • Volume
    12
  • Issue
    9
  • fYear
    2002
  • Firstpage
    351
  • Lastpage
    352
  • Abstract
    A recent letter by S.A. Maas (see ibid., vol.12, no.3, p.88-9, March 2002) reported ill conditioning in nonlinear circuit simulators caused by the introduction of self-heating effects into FET models. This is true for circumstances outlined in that work but is a consequence of using an incomplete thermal model. This letter points out that an account for both thermal potential and mobility variation with temperature will eliminate the problem.
  • Keywords
    field effect transistors; semiconductor device models; FET models; ill conditioning; mobility variation; nonlinear circuit simulators; self-heating effects; thermal model; thermal potential; Circuit simulation; Equations; Microwave FETs; Microwave devices; Nonlinear circuits; Temperature dependence; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2002.803141
  • Filename
    1031931