Title :
Iterative solutions for highly doped emitters under illumination
Author :
Alcubilla, R. ; Blasco, E. ; Correig, X.
Author_Institution :
Dept. de Ingenieria Electron., Univ. Politecnica de Cataluna, Barcelona, Spain
fDate :
6/1/1989 12:00:00 AM
Abstract :
Iterative solutions are proposed for quasineutral regions with position-dependent composition under illumination. Recently a solution for dark conditions in terms of multiple integral series has been proposed. The authors present a conceptually similar solution, but one which includes the generation term in the continuity equation. This approach has been used to analyse the emitter´s internal quantum efficiency in solar cells.<>
Keywords :
bipolar transistors; heavily doped semiconductors; iterative methods; semiconductor device models; solar cells; continuity equation; generation term; highly doped emitters; illumination; internal quantum efficiency; iterative solutions; modelling; position-dependent composition; quasineutral regions; semiconductor devices; solar cells; transistors; Bipolar transistors; Iterative methods; Photovoltaic cells; Semiconductor device modeling;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
