Pulsed Optical and Electron Beam Excitation of Silicon Position Sensitive Detectors

Silicon two dimensional position sensitive detectors were fabricated by ion implantation and their response to pulsed electron beam and optical excitation was determined. The results of measurements of rise time, position resolution, linearity and current gain as a function of electron accelerating voltage are presented. It is shown that the gain-voltage curves are consistent with a model incorporating a thin (¿0.5 ¿m) dead layer at the surface of the detector.