Title :
MOSFET Detector Evaluation
Author_Institution :
University of California, Lawrence Livermore Laboratory Livermore, California 94550
Abstract :
Metal-oxide-semiconductor devices have been evaluated as low-energy (250 eV to 50 keV) x-ray dosimeters. They can be used to measure dosages as low as 1 rad (SiO2) to as high as 105 rad (SiO2). Their small size and basic simplicity make it possible to form arrays of dosimeters for x-ray imaging. When compared to thermoluminescent dosimeters (TLD´s), photographic film, and thermopiles, MOSFET dosimeters offer distinct advantages in terms of their small size, their sensitivity to photon energies below 10 keV, and their adaptability to an electrical readout system.
Keywords :
Atomic measurements; Detectors; Dielectric substrates; Ionizing radiation; MOS devices; MOSFET circuits; Radiation effects; Voltage; X-ray detection; X-ray imaging;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1974.4327488
