DocumentCode :
814370
Title :
Influence of gain nonlinearities on the linewidth enhancement factor in semiconductor lasers
Author :
Morthier, G. ; Vankwikelberge, P. ; Buytaert, F. ; Baets, R.
Author_Institution :
Lab. of Electromagnetism & Acoust., Gent Univ., Belgium
Volume :
137
Issue :
1
fYear :
1990
fDate :
2/1/1990 12:00:00 AM
Firstpage :
30
Lastpage :
32
Abstract :
Nonlinear gain saturation is shown to result in a power dependence of the linewidth enhancement factor. This can explain a linewidth rebroadening or saturation at high power levels in semiconductor lasers, even if no side modes are considered
Keywords :
laser theory; semiconductor junction lasers; spectral line breadth; Fabry Perot laser; gain nonlinearities; linewidth enhancement factor; linewidth rebroadening; nonlinear gain saturation; power dependence; semiconductor lasers;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings J
Publisher :
iet
ISSN :
0267-3932
Type :
jour
Filename :
45769
Link To Document :
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