Title :
Reliability of mesa and planar InGaAs PIN photodiodes
Author :
Skrimshire, C P ; Farr, J R ; Sloan, D.F. ; Robertson, M.J. ; Putland, P.A. ; Stokoe, J.C.D. ; Sutherland, R.R.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
fDate :
2/1/1990 12:00:00 AM
Abstract :
InGaAs planar-structure PIN photodiodes fabricated from MOVPE material have been demonstrated to have outstanding reliability. The predicted random failure rate at 20°C is less than 0.3 FITs, and the mean time to failure is estimated to be 1011 hours at 20°C. By contrast, the reliability of mesa-structure photodiodes is unacceptable because of an instability of the dark current. A similar kind of instability has been observed in commercially available mesa photodiodes. Extensive life testing of planar-structure and mesa-structure PINs made by several manufacturers shows that the reliability of mesa-structure PINs is inferior in all cases
Keywords :
III-V semiconductors; failure analysis; gallium arsenide; indium compounds; life testing; p-i-n diodes; photodiodes; reliability; semiconductor device testing; InGaAs; MOVPE material; PIN photodiodes; dark current instability; life testing; mean time to failure; mesa-structure; random failure rate; reliability;
Journal_Title :
Optoelectronics, IEE Proceedings J
