The effect of sintering dopant incorporation in modified chemical vapor deposition

Author

DiGiovanni, D.J. ; Morse, T.F. ; Cipolla, J.W., Jr.

Author_Institution

Lab. of Lightwave Technol., Brown Univ., Providence, RI, USA

Volume

7

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

1967

Lastpage

1972

Abstract

To determine the role of the diffusion of dopant (phosphorus, germanium, and fluorine) into silica particles and through the voids of porous soot during sintering, initially uniform soot layers are created with a stationary torch and then sintered at different rates, dopant partial pressures, and temperatures. The layer structure seen in modified chemical vapor deposition preforms is formed initially by gas phase thermal gradients during particle formation, but diffusion during sintering severely modifies the dopant level and slightly increases the concentration gradient within each layer

Keywords

chemical vapour deposition; diffusion in solids; fluorine; germanium; impurities; optical fibres; phosphorus; silicon compounds; sintering; SiO₂:F; SiO₂:Ge; SiO₂:P; gas phase thermal gradients; modified chemical vapor deposition; optical fibres; particle formation; preforms; semiconductor; sintering; Chemical technology; Chemical vapor deposition; Germanium; Glass; Laboratories; Optical fibers; Preforms; Semiconductor process modeling; Silicon compounds; Temperature;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.41616

Filename

41616