Title :
The effect of sintering dopant incorporation in modified chemical vapor deposition
Author :
DiGiovanni, D.J. ; Morse, T.F. ; Cipolla, J.W., Jr.
Author_Institution :
Lab. of Lightwave Technol., Brown Univ., Providence, RI, USA
fDate :
12/1/1989 12:00:00 AM
Abstract :
To determine the role of the diffusion of dopant (phosphorus, germanium, and fluorine) into silica particles and through the voids of porous soot during sintering, initially uniform soot layers are created with a stationary torch and then sintered at different rates, dopant partial pressures, and temperatures. The layer structure seen in modified chemical vapor deposition preforms is formed initially by gas phase thermal gradients during particle formation, but diffusion during sintering severely modifies the dopant level and slightly increases the concentration gradient within each layer
Keywords :
chemical vapour deposition; diffusion in solids; fluorine; germanium; impurities; optical fibres; phosphorus; silicon compounds; sintering; SiO2:F; SiO2:Ge; SiO2:P; gas phase thermal gradients; modified chemical vapor deposition; optical fibres; particle formation; preforms; semiconductor; sintering; Chemical technology; Chemical vapor deposition; Germanium; Glass; Laboratories; Optical fibers; Preforms; Semiconductor process modeling; Silicon compounds; Temperature;
Journal_Title :
Lightwave Technology, Journal of