Title :
Infrared microscopy studies on high-power InGaAs-GaAs-InGaP lasers with Ga2O3 facet coatings
Author :
Passlack, Matthias ; Bethea, C.G. ; Hobson, W.S. ; Lopata, John ; Schubert, E.F. ; Zydzik, George J. ; Nichols, Doyle T. ; de Jong, J.F. ; Chakrabarti, Utpal K. ; Dutta, Niloy K.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
InGaAs-GaAs separate confinement, heterostructure single quantum-well (SCH-SQW) lasers (λ=0.98 μm) with lattice-matched InGaP cladding layers, using a new Ga2O3 low reflectivity (LR) front-facet coating, are reported. The CW peak power density (17 MW/cm2) of 6 μm×750 μm ridge-waveguide lasers is limited by thermal rollover, and repeated cycling beyond thermal rollover produced no change in operating characteristics. The high-power temperature distribution along the active stripe has been measured by high-resolution infrared (3-5 μm) imaging microscopy. The temperature profile acquired for a very high optical power density PD=11 MW/cm3 was found to be uniform along the inner active laser stripe, and revealed a local temperature increase at the LR front facet ΔTf of only 9 K above the average stripe temperature ΔTs=24 K. An excellent front-facet interface recombination velocity <105 cm/s has been inferred from the measured low local temperature rise in the front facet
Keywords :
infrared imaging; optical films; optical microscopy; quantum well lasers; ridge waveguides; temperature distribution; waveguide lasers; 0.98 micron; 24 to 33 K; 3 to 5 micron; 6 micron; 750 micron; CW peak power density; Ga2O3; Ga2O3 facet coatings; Ga2O3 low reflectivity front-facet coating; InGaAs-GaAs separate confinement heterostructure single quantum-well lasers; InGaAs-GaAs-InGaP; LR front facet; SCH SQW lasers; along the inner active laser stripe, and revealed a l; ctive stripe; front-facet interface recombination velocity; high-power InGaAs-GaAs-InGaP lasers; high-power temperature distribution; high-resolution IR imaging microscopy; infrared microscopy; inner active laser stripe; lattice-matched InGaP cladding layers; operating characteristics; repeated cycling; ridge-waveguide lasers; stripe temperature; temperature profile; thermal rollover; very high optical power density; Coatings; Infrared imaging; Laser transitions; Microscopy; Potential well; Power lasers; Quantum well lasers; Reflectivity; Temperature distribution; Temperature measurement;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.401187
