DocumentCode :
814682
Title :
Improvements in the Noise Theory of the MMIC Distributed Amplifiers
Author :
Hamidi, Emad ; Mohammad-Taheri, Mahmoud ; Moradi, Gholamreza
Author_Institution :
Sch. of Electr. & Comput. Eng., Univ. of Tehran, Tehran
Volume :
56
Issue :
8
fYear :
2008
Firstpage :
1797
Lastpage :
1806
Abstract :
Exact and simple expressions have been obtained for the intrinsic noise figure of monolithic microwave integrated circuit distributed amplifiers (DAs). The method has been applied on both MESFET and HBT DAs. It has been shown that the complexity of the obtained formulas is much less than that of the previously published literature. The results of the new theory are then compared with that of the previous theories and it has been shown that the results exactly match.
Keywords :
MMIC amplifiers; Schottky gate field effect transistors; distributed amplifiers; heterojunction bipolar transistors; HBT; MESFET; MMIC distributed amplifiers; intrinsic noise figure; monolithic microwave integrated circuit; noise theory; Distributed amplifiers (DAs); HBT; MESFET; intrinsic noise figure; preamplifier;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2008.927310
Filename :
4578714
Link To Document :
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