Title :
Column Address Selection in Optical RAMs With Positive and Negative Logic Row Access
Author :
Vagionas, Christos ; Markou, S. ; Dabos, G. ; Alexoudi, T. ; Tsiokos, D. ; Miliou, A. ; Pleros, N. ; Kanellos, G.T.
Author_Institution :
Dept. of Inf., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece
Abstract :
An optical RAM row access gate followed by a column address selector for wavelength-division-multiplexing (WDM)-formatted words employing a single semiconductor optical amplifier-Mach-Zehnder interferometer (SOA-MZI) is presented. RAM row access is performed by the SOA-MZI that grants random access to a 4-bit WDM-formatted optical word employing multiwavelength cross-phase-modulation (XPM) phenomena, whereas column decoding is carried out in a completely passive way using arrayed waveguide grating. Proof-of-concept experimental verification for both positive and negative logic access is demonstrated for 4 × 10 Gb/s optical words, showing error-free operation with only 0.4-dB-peak-power penalty and requiring a power value of 25 mW/Gb/s.
Keywords :
Mach-Zehnder interferometers; optical storage; random-access storage; semiconductor optical amplifiers; wavelength division multiplexing; Mach-Zehnder interferometer; SOA-MZI; WDM; arrayed waveguide grating; bit rate 10 Gbit/s; column address selection; column decoding; multiwavelength cross-phase-modulation; negative logic row access; optical RAM; positive logic row access; semiconductor optical amplifier; wavelength-division-multiplexing; word length 4 bit; Adaptive optics; Optical amplifiers; Optical attenuators; Optical fibers; Optical interferometry; Optical pulses; Random access memory; Mach–Zehnder interferometer; optical memory; optical signal processing; semiconductor optical amplifier (SOA);
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2013.2288299
