Negative Differential Transconductance and Nonreciprocal Effects in a Y-Branch Nanojunction: High-Frequency Analysis

Author

Bednarz, Lukasz ; Rashmi ; Simon, Pascal ; Huynen, Isabelle ; González, Tomás ; Mateos, Javier

Author_Institution

Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve

Volume

5

Issue

6

fYear

2006

Firstpage

750

Lastpage

757

Abstract

We report on negative differential transconductance (NDT) effect in Y-branch nanojunctions which leads to small-signal nonreciprocity of the device for certain biasing schemes. We present the dc analysis of the device from which we identify the bias regions where NDT effect occurs. We compare experimental dc measurements with results of Monte Carlo simulations, which yields very good qualitative and quantitative agreement. We perform a high-frequency analysis of the NDT effect up to 110 GHz which shows that the effect discussed is still present at such high frequencies

Keywords

Monte Carlo methods; ballistic transport; high-frequency effects; nanotechnology; semiconductor devices; semiconductor heterojunctions; 2D electron gas; Monte Carlo simulations; NDT; Y-branch nanojunction; ballistic transport; dc measurements; high-frequency analysis; negative differential transconductance; nonreciprocal effects; Electrons; Frequency; Gain measurement; Hafnium; Nanoscale devices; Nanotechnology; Performance analysis; Scattering; Shape control; Transconductance; Active; HF measurements; Y-branch junction; gain; nanotechnology; negative differential conductance (NDC); nonlinear; room temperature; two-dimensional electron gas (2DEG);

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2006.885030

Filename

4011918