DocumentCode :
814980
Title :
Negative Differential Transconductance and Nonreciprocal Effects in a Y-Branch Nanojunction: High-Frequency Analysis
Author :
Bednarz, Lukasz ; Rashmi ; Simon, Pascal ; Huynen, Isabelle ; González, Tomás ; Mateos, Javier
Author_Institution :
Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve
Volume :
5
Issue :
6
fYear :
2006
Firstpage :
750
Lastpage :
757
Abstract :
We report on negative differential transconductance (NDT) effect in Y-branch nanojunctions which leads to small-signal nonreciprocity of the device for certain biasing schemes. We present the dc analysis of the device from which we identify the bias regions where NDT effect occurs. We compare experimental dc measurements with results of Monte Carlo simulations, which yields very good qualitative and quantitative agreement. We perform a high-frequency analysis of the NDT effect up to 110 GHz which shows that the effect discussed is still present at such high frequencies
Keywords :
Monte Carlo methods; ballistic transport; high-frequency effects; nanotechnology; semiconductor devices; semiconductor heterojunctions; 2D electron gas; Monte Carlo simulations; NDT; Y-branch nanojunction; ballistic transport; dc measurements; high-frequency analysis; negative differential transconductance; nonreciprocal effects; Electrons; Frequency; Gain measurement; Hafnium; Nanoscale devices; Nanotechnology; Performance analysis; Scattering; Shape control; Transconductance; Active; HF measurements; Y-branch junction; gain; nanotechnology; negative differential conductance (NDC); nonlinear; room temperature; two-dimensional electron gas (2DEG);
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2006.885030
Filename :
4011918
Link To Document :
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