• DocumentCode
    814999
  • Title

    A 30.5 dBm 48% PAE CMOS Class-E PA With Integrated Balun for RF Applications

  • Author

    Brama, Riccardo ; Larcher, Luca ; Mazzanti, Andrea ; Svelto, Francesco

  • Author_Institution
    Dipt. di Sci. e Metodi dell´´Ing., Univ. di Modena e Reggio Emilia, Reggio Emilia
  • Volume
    43
  • Issue
    8
  • fYear
    2008
  • Firstpage
    1755
  • Lastpage
    1762
  • Abstract
    Integration of the power amplifier together with signal processing in a transmitter is still missing in demanding RF commercial products. Issues preventing PA integration include LO pulling phenomena, thermal dissipation, and power efficiency. In this work we investigate high efficiency watt range Class-E PAs and integrated baluns. In particular, insights in the design of a fully differential cascode topology for high efficiency and reliable operation are provided and a narrowband lumped element balun, employing minimum number of integrated inductors for minimum power loss, is introduced. Two versions have been manufactured using a 0.13 mum CMOS technology. The first comprises the driver, and a differential PA connected to an external low-loss commercial balun. Experiments prove 31 dBm delivered output power, with 58% PAE and 67% drain efficiency, at 1.7 GHz. The second version adopts the same driver and PA and also integrates the balun. Experiments prove 30.5 dBm delivered output power, with 48% PAE and 55% drain efficiency, at 1.6 GHz.
  • Keywords
    CMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; baluns; signal processing; CMOS class-E power amplifiers; UHF power amplifiers; differential cascode topology; frequency 1.6 GHz; frequency 1.7 GHz; integrated baluns; power efficiency; signal processing; size 0.13 mum; switching amplifiers; thermal dissipation; CMOS technology; Impedance matching; Narrowband; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Signal processing; Topology; Transmitters; Baluns; CMOS power amplifiers; class-E; radio-frequency (RF) circuits; switching amplifiers; wireless communications;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2008.925605
  • Filename
    4578747