Title :
Introducing Nanosized Pinning Centers Into Bulk Gd–Ba–Cu–O by Infiltration Method
Author :
Difan Zhou ; Izumi, M. ; Fujimoto, Takafumi ; Yufeng Zhang ; Wen Li Zhou ; Kun Xu
Author_Institution :
Lab. of Appl. Phys., Tokyo Univ. of Marine Sci. & Technol., Tokyo, Japan
Abstract :
Chemical doping is considered as an economic and effective method to enhance the flux pinning properties of high-temperature superconducting materials. However, it is difficult to realize a large doping amount in textured grown bulk superconductors since the doped particles are prone to accumulate and affect the melt-textured growth of the bulk superconductors. In the present work, we introduced nanosized ZrO2 particles into the Gd-Ba-Cu-O samples through the external liquid source by infiltration method. A large doping amount of ZrO2 particles up to 20 mol% has been realized in finely grown Gd-Ba-Cu- O samples. Improvement in the trapped field has been found for low-level doped samples. The localized microstructure and distribution of the doped particles have been observed by scanning electron microscopy and discussed in this paper.
Keywords :
barium compounds; crystal microstructure; doping; flux pinning; gadolinium compounds; high-temperature superconductors; impurity distribution; melt infiltration; nanoparticles; scanning electron microscopy; zirconium compounds; GdBaCuO:ZrO2; SEM; bulk Gd-Ba-Cu-O; chemical doping; doped particle distribution; external liquid source; flux pinning properties; high-temperature superconducting materials; infiltration method; localized microstructure; melt-textured growth; nanosized pinning centers; nanosized zirconia particles; scanning electron microscopy; textured grown bulk superconductors; trapped field; Art; Doping; Flux pinning; High-temperature superconductors; Microstructure; Superconducting magnets; Chemical doping; flux pinning; high-temperature superconductors (HTS); melt-textured growth; trapped field magnet (TFM);
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2014.2359768