Title :
An enhancement-mode MOS voltage-controlled linear resistor with large dynamic range
Author :
Moon, G. ; Zaghloul, M.E. ; Newcomb, R.W.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., George Washington Univ., DC, USA
fDate :
10/1/1990 12:00:00 AM
Abstract :
It is shown that the depletion-mode linear resistor of Babanezhad and Temes (IEEE J. Solid-State Circuits, vol. SC-19, p.932-8, 1984) can be implemented in enhancement-mode devices. This allows a large increase in the dynamic range of the resistors. By inserting a bias source, the linearity can also be improved. A layout and experimental results on the resulting IC are included
Keywords :
MOS integrated circuits; linear integrated circuits; resistors; IC layout; MOSIC; bias source; dynamic range; enhancement-mode; voltage-controlled linear resistor; CMOS technology; Controllability; Dynamic range; Integrated circuit layout; Linearity; MOS integrated circuits; MOSFETs; Moon; Resistors; Threshold voltage;
Journal_Title :
Circuits and Systems, IEEE Transactions on
