Fabrication and Room-Temperature Single-Charging Behavior of Self-Aligned Single-Dot Memory Devices

Author

Tang, Xiaohui ; Reckinger, Nicolas ; Bayot, Vincent ; Krzeminski, Christophe ; Dubois, Emmanuel ; Villaret, Alexandre ; Bensahel, Daniel-Camille

Author_Institution

Microelectron. Lab, Univ. Catholique de Louvain, Louvain-la-Neuve

Volume

5

Issue

6

fYear

2006

Firstpage

649

Lastpage

656

Abstract

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory arrays, device scalability, and process transferability to an industrial application

Keywords

Coulomb blockade; etching; nanotechnology; oxidation; semiconductor quantum dots; single electron devices; 293 to 298 K; Coulomb blockade effect; arsenic-assisted etching; nanotechnology; oxidation effects; self-aligned floating gate; self-aligned single-dot memory devices; single-charging behaviour; single-dot memory arrays; single-electron memory circuit; Circuits; Etching; Fabrication; Lithography; Nanocrystals; Nonvolatile memory; Oxidation; Scalability; Silicon; Single electron memory; Arsenic-assisted etching and oxidation effects; Coulomb blockade effect; nanotechnology; self-aligned floating gate; single-electron memory;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2006.883481

Filename

4011942