DocumentCode
815505
Title
Broad-area semiconductor lasers with spatially modulated reflectivity of the mirrors
Author
Mroziewicz, B.
Author_Institution
Inst. of Electron Technol., Warsaw, Poland
Volume
32
Issue
4
fYear
1996
fDate
2/15/1996 12:00:00 AM
Firstpage
329
Lastpage
330
Abstract
Emission properties of broad-area semiconductor lasers with stripes etched on one of the laser mirrors, perpendicular to the p-n junction plane, are described. Spatial modulation of the mirror reflectivity induced lasing of individual, phase coupled filaments and significantly affected the shape of the laser output beam. The cross-section of the beam became almost circular and had an intensity distribution along its horizontal and vertical axes that could be approximated by a Gaussian function
Keywords
laser beams; laser mirrors; semiconductor lasers; spatial light modulators; Gaussian function; beam cross-section; broad-area semiconductor lasers; etched stripes; intensity distribution; laser output beam; mirror reflectivity; phase coupled filaments; spatially modulated reflectivity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960209
Filename
490950
Link To Document