DocumentCode
815601
Title
Electrical measurement of the junction temperature of an RF power transistor
Author
Cain, Blair M. ; Goud, Paul A. ; Englefield, C.G.
Author_Institution
Telecommun. Res. Lab., Edmonton, Alta., Canada
Volume
41
Issue
5
fYear
1992
fDate
10/1/1992 12:00:00 AM
Firstpage
663
Lastpage
665
Abstract
An enhanced electrical method is presented for measuring the average junction temperature of an RF bipolar transistor. A two-step procedure, previously developed for DC operation, is extended to include the junction temperature measurement for an RF power transistor in a tuned amplifier circuit. The measurement technique is convenient, since it can be used with normal, packaged devices, and does not require a complex heat flow model or ambient temperature measurements
Keywords
bipolar transistors; power transistors; temperature measurement; RF bipolar transistor; RF power transistor; average junction temperature; junction temperature; tuned amplifier circuit; Bipolar transistors; Electric variables measurement; Operational amplifiers; Power amplifiers; Power measurement; Power transistors; Radio frequency; Radiofrequency amplifiers; Temperature measurement; Tuned circuits;
fLanguage
English
Journal_Title
Instrumentation and Measurement, IEEE Transactions on
Publisher
ieee
ISSN
0018-9456
Type
jour
DOI
10.1109/19.177339
Filename
177339
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