Title :
Electrical measurement of the junction temperature of an RF power transistor
Author :
Cain, Blair M. ; Goud, Paul A. ; Englefield, C.G.
Author_Institution :
Telecommun. Res. Lab., Edmonton, Alta., Canada
fDate :
10/1/1992 12:00:00 AM
Abstract :
An enhanced electrical method is presented for measuring the average junction temperature of an RF bipolar transistor. A two-step procedure, previously developed for DC operation, is extended to include the junction temperature measurement for an RF power transistor in a tuned amplifier circuit. The measurement technique is convenient, since it can be used with normal, packaged devices, and does not require a complex heat flow model or ambient temperature measurements
Keywords :
bipolar transistors; power transistors; temperature measurement; RF bipolar transistor; RF power transistor; average junction temperature; junction temperature; tuned amplifier circuit; Bipolar transistors; Electric variables measurement; Operational amplifiers; Power amplifiers; Power measurement; Power transistors; Radio frequency; Radiofrequency amplifiers; Temperature measurement; Tuned circuits;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
