650-mW single lateral mode power from tapered and flared buried ridge laser

Author

Swint, R.B. ; Huber, A.E. ; Yeoh, T.S. ; Woo, C.Y. ; Coleman, J.J. ; Faircloth, B.O. ; Zediker, M.S.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

14

Issue

9

fYear

2002

Firstpage

1237

Lastpage

1239

Abstract

Very high single lateral mode output powers of 650 mW are obtained from a diode laser with a unique waveguide design. The waveguide flares in the lateral dimension to create a larger spot size on the facet and simultaneously tapers in the transverse dimension to inhibit propagation of higher order lateral modes. These GaAs buried ridge devices are fabricated by selective area epitaxy.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; laser modes; quantum well lasers; ridge waveguides; waveguide lasers; 1.04 micron; 650 mW; 650-mW single lateral mode power; GaAs buried ridge devices; GaAs-In/sub 0.29/Ga/sub 0.71/As; MOCVD; diode laser; higher order lateral mode propagation suppression; lateral dimension flaring; quantum well optical confinement factor; selective area epitaxy; spot size; tapered flared buried ridge laser; transverse dimension tapering; very high single lateral mode output powers; waveguide design; Epitaxial growth; Erbium-doped fiber lasers; Laser modes; Optical design; Optical propagation; Optical waveguides; Power generation; Power lasers; Pump lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2002.801072

Filename

1032338