• DocumentCode
    815805
  • Title

    Edge emitting laser structure using electrical connection to the optical confinement layers

  • Author

    Boche, B. ; Müller, R. ; Böhm, G. ; Tränkle, G. ; Weimann, G.

  • Author_Institution
    Lehrstuhl fur Technische Elektronik, Tech. Univ. Munchen, Germany
  • Volume
    32
  • Issue
    4
  • fYear
    1996
  • fDate
    2/15/1996 12:00:00 AM
  • Firstpage
    333
  • Lastpage
    334
  • Abstract
    The authors describe the fabrication and characterisation of a cladding layer contacted laser (CLCL) integrated into GaAs/AlGaAs-epitaxial layers with a pnp-doped structure. Threshold current densities of 0.86 kA/cm2 and a CW operation of more than 20 mW optical power are achieved with this structure, allowing the integration of a CLCL with a directional coupler
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; semiconductor lasers; 20 mW; CW operation; GaAs-AlGaAs; GaAs/AlGaAs-epitaxial layers; cladding layer contacted laser; directional coupler; edge emitting laser; electrical connection; fabrication; integration; optical confinement layers; optical power; pnp-doped structure; threshold current densities;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960228
  • Filename
    490953
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=815805