DocumentCode :
815842
Title :
Dead Layers at the Surface of p-i-n Detectors - A Review
Author :
Dinger, R.J.
Author_Institution :
Atomic Energy of Canada Limited Physics Division, Chalk River Nuclear Laboratories Chalk River, Ontario, Canada K0J 1J0
Volume :
22
Issue :
1
fYear :
1975
Firstpage :
135
Lastpage :
139
Abstract :
A review of recent work concerning dead layers at the surface of p-i-n detectors is given. Surface states, produced during preparation of the detector or by adsorbed gases at its surface, often lead to a surface channel. In the high-resistivity active volume of the detectors the thickness of the surface channel can be as much as 1 mm. The charge collection within a surface channel is disturbed and it is shown, by theory and experiment, that this results in the dead layers frequently observed on p-i-n detectors.
Keywords :
Atmospheric modeling; Atomic layer deposition; Detectors; Etching; Gases; Laboratories; PIN photodiodes; Physics; Rivers; Surface treatment;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1975.4327630
Filename :
4327630
Link To Document :
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