Title :
Lateral distribution of radiation-induced damage in MOSFETs
Author :
Chen, Wenliang ; Balasinski, Artur ; Ma, Tso-Ping
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Significant lateral nonuniformity of radiation-induced oxide charge and interface traps in short-channel CMOS transistors was observed. This nonuniformity affects device DC parameters. A modified charge pumping technique was used in this study. Its basic principles are briefly discussed. Results for MOSFETs irradiated under various bias conditions are presented
Keywords :
X-ray effects; insulated gate field effect transistors; interface electron states; semiconductor device testing; DC parameters; MOSFETs; NMOS; PMOSFET; X-ray irradiation; bias conditions; charge pumping technique; interface traps; lateral nonuniformity; oxide charge; radiation-induced damage; short-channel CMOS transistors; Aging; Charge measurement; Charge pumps; Current measurement; FETs; Hot carrier injection; MOSFETs; Microelectronics; Pulse measurements; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
