• DocumentCode
    815923
  • Title

    Lateral distribution of radiation-induced damage in MOSFETs

  • Author

    Chen, Wenliang ; Balasinski, Artur ; Ma, Tso-Ping

  • Author_Institution
    Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
  • Volume
    38
  • Issue
    6
  • fYear
    1991
  • fDate
    12/1/1991 12:00:00 AM
  • Firstpage
    1124
  • Lastpage
    1129
  • Abstract
    Significant lateral nonuniformity of radiation-induced oxide charge and interface traps in short-channel CMOS transistors was observed. This nonuniformity affects device DC parameters. A modified charge pumping technique was used in this study. Its basic principles are briefly discussed. Results for MOSFETs irradiated under various bias conditions are presented
  • Keywords
    X-ray effects; insulated gate field effect transistors; interface electron states; semiconductor device testing; DC parameters; MOSFETs; NMOS; PMOSFET; X-ray irradiation; bias conditions; charge pumping technique; interface traps; lateral nonuniformity; oxide charge; radiation-induced damage; short-channel CMOS transistors; Aging; Charge measurement; Charge pumps; Current measurement; FETs; Hot carrier injection; MOSFETs; Microelectronics; Pulse measurements; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.124084
  • Filename
    124084
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=815923