A 310°/3.6-dB K-band phaseshifter using paraelectric BST thin films

Author

Vélu, G. ; Blary, K. ; Burgnies, L. ; Carru, J.C. ; Delos, E. ; Marteau, A. ; Lippens, Didier

Author_Institution

Univ. du Litoral-Cote d´´Opale, Calais, France

Volume

16

Issue

2

fYear

2006

Firstpage

87

Lastpage

89

Abstract

Ferro- and para-electric BaSrTiO₃ (ε_r∼350 and tgδ∼5×10^-2 at 0V) thin films were deposited by low-cost sol-gel techniques. Subsequently, the films were used for fabricating coplanar waveguide phaseshifters using tunable finger-shaped capacitors. A 310° phaseshift was obtained at 30GHz and 35V of tuning voltage with 3.6dB of insertion loss yielding a figure of merit of 85°/dB.

Keywords

barium compounds; capacitors; coplanar waveguide components; ferroelectric thin films; high-k dielectric thin films; microwave phase shifters; 3.6 dB; 30 GHz; 35 V; BaSrTiO₃; K-band phase shifter; coplanar waveguide phase shifters; ferroelectric thin film; finger-shaped capacitors; interdigitated capacitors; paraelectric thin films; sol-gel techniques; tunable capacitor; Atomic force microscopy; Binary search trees; Capacitors; Coplanar waveguides; Dielectric materials; Ferroelectric materials; Frequency; Scanning electron microscopy; Sputtering; Transistors; BaSrTiO3 (BST); interdigitated capacitors (IDCs); paraelectric film; phaseshifters;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.863198

Filename

1588946