Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications

We report deep-submicrometer gate-recessed and field-plated AlGaN-GaN HEMTs and their state-of-the-art continuous wave (CW) power performance measured at 30 GHz. The AlGaN-GaN HEMTs exhibit a CW power density of 5.7 W/mm with a power-added efficiency (PAE) of 45% and drain-efficiency of 58% at V_ds=20 V. At V_ds=28 V, the output power density is measured as high as 6.9 W/mm with both PAE and output power increasing with input power level. Compared to conventional T-gated AlGaN-GaN HEMTs, the output power density and PAE of gate-recessed AlGaN-GaN HFETs are improved greatly, along with the excellent pulsed IVs. We attribute the improvement to both a field-plating effect and a vertical separation of the gate plane from surface states.