Title :
Charge Carrier Transport Properties of Semiconductor Materials Suitable for Nuclear Radiation Detectors
Author :
Ottaviani, G. ; Canali, C. ; Quaranta, A.Alberigi
Author_Institution :
Istituto di Fisica dell ´´UniversitÃ\xa0, Via Vivaldi 70, 41100 Modena, Italy and I.N.F.N., Sezione Bologna, Italy
Abstract :
Charge carrier drift velocities in semiconductor materials suitable for solid state detectors has been reviewed. Si, Ge, CdTe and GaAs are considered. New data for HgI2 recently obtained are also reported. The data cover a large range of temperatures (6-430 K) and electric fields up to 50 KV/cm. An anisotropy effect in the drift velocity obtained by applying the electric field parallel to different crystallographic axis is also discussed for the case of Si and Ge.
Keywords :
Charge carriers; Electron mobility; Gallium arsenide; Plasma properties; Plasma temperature; Radiation detectors; Semiconductor materials; Semiconductor radiation detectors; Solid state circuits; Timing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1975.4327640
