The photoconductivity spectrum of electron and neutron irradiated n lightly doped GaAs

Author

Khanna, S.M. ; Carlone, C. ; Hallé, S. ; Parenteau, M. ; Béliveau, A. ; Aktik, C. ; Gerdes, John W., Jr.

Author_Institution

Def. Res. Establ. Ottawa, Ont., Canada

Volume

38

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1145

Lastpage

1152

Abstract

The spectral photoconductivity spectrum of lightly doped n GaAs exposed to electron and neutron irradiation is studied. From the temperature dependence of the photoconductivity, it is deduced that neutron irradiation induces a shallow donor level; photoluminescence experiments suggest that its energy lies 31 meV below the conduction band. Electron irradiation is about factor of 10 more effective than the neutron irradiation in reducing the ratio PC(17)/PC(300). This suggests that the defect donor level associated with electron irradiation lies about 30% below that induced by neutron irradiation

Keywords

III-V semiconductors; defect electron energy states; electron beam effects; gallium arsenide; luminescence of inorganic solids; neutron effects; photoconductivity; photoluminescence; silicon; GaAs:Si; defect donor level; electron irradiation; neutron irradiation; photoconductivity spectrum; photoluminescence; shallow donor level; temperature dependence; Doping; Electrons; Gallium arsenide; Impurities; Insulation; MOCVD; Neutrons; Photoconductivity; Photoluminescence; Temperature dependence;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.124087

Filename

124087