DocumentCode :
815975
Title :
Optical Quenching in CdTe Detectors
Author :
Martin, G. ; Bach, P. ; Tranchart, J.C. ; Fabre, E.
Author_Institution :
Laboratoires d´´Electronique et de Physique Appliquée 3 avenue Descartes, 94450 Limeil-Brevannes (France)
Volume :
22
Issue :
1
fYear :
1975
Firstpage :
226
Lastpage :
228
Abstract :
The intrinsic resolution of low energy photopeaks with CdTe detectors is shown to be improved if the detectors are illuminated with a GaAs electroluminescent diode. Time of flight measurements on this CdTe material exhibit a strong modification of the current response under a given monochromatic infra-red illumination. The interpretation involves trapping effect and its optical quenching.
Keywords :
Aerospace materials; Current measurement; Detectors; Diodes; Electroluminescence; Energy resolution; Gallium arsenide; Lighting; Optical materials; Time measurement;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1975.4327643
Filename :
4327643
Link To Document :
بازگشت