Uncertainty Analysis of Two-Step and Three-Step Methods for Deembedding On-Wafer RF Transistor Measurements

Author

Cha, Junyoung ; Cha, Jiyong ; Lee, Seonghearn

Author_Institution

Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin

Volume

55

Issue

8

fYear

2008

Firstpage

2195

Lastpage

2201

Abstract

In order to investigate the deembedding uncertainties in the most commonly used deembedding methods, f_max and f_T deembedded from two- and three-step ones are compared with those of an accurate pad-open-short technique requiring an additional pad open pattern. The lower f_max and higher f_T values from these deembedding methods than those of the pad-open-short technique considering the distributed effect are obtained in an actual MOSFET with Lg = 0.13 mum. The deembedding uncertainty of two- and three-step methods is reduced without the pad open pattern by a simple deembedding technique using extrinsic and intrinsic admittances in specific splitting fractions.

Keywords

MOSFET circuits; S-parameters; integrated circuit testing; measurement uncertainty; radiofrequency integrated circuits; MOSFET; S-parameter measurement; deembedding methods; deembedding on-wafer RF transistor measurements; extrinsic admittance; intrinsic admittance; specific splitting fractions; Circuit testing; Coupling circuits; Equivalent circuits; Integrated circuit interconnections; Integrated circuit measurements; MOSFET circuits; Parasitic capacitance; Probes; Radio frequency; Scattering parameters; $S$-parameter measurement; CMOS; MOSFET; RF; deembedding; interconnection; on-wafer measurements; pad; transistor;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.926752

Filename

4578835