• DocumentCode
    815998
  • Title

    Bi2S3 as a high Z material for γ-ray detectors

  • Author

    Wald, F.V. ; Bullitt, J. ; Bell, R.O.

  • Author_Institution
    Tyco Laboratories, Inc. 16 Hickory Drive Waltham, Massachusetts 02154
  • Volume
    22
  • Issue
    1
  • fYear
    1975
  • Firstpage
    246
  • Lastpage
    250
  • Abstract
    The semiconductor Bi2S3 has a bandgap of 1.3 eV and reported mobilities of 200 cm2/V for holes and 1100 cm2/V for electrons. Its absorption cross section is 1.8 times that of Hg I2. We report compensation of this material to 107 to 109 Ω-cm and initial results on γ-ray detection properties.
  • Keywords
    Absorption; Bismuth; Charge carrier processes; Conductivity; Crystalline materials; Crystallization; Electron mobility; Furnaces; Photonic band gap; Temperature;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1975.4327646
  • Filename
    4327646
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=815998