Title :
Bi2S3 as a high Z material for γ-ray detectors
Author :
Wald, F.V. ; Bullitt, J. ; Bell, R.O.
Author_Institution :
Tyco Laboratories, Inc. 16 Hickory Drive Waltham, Massachusetts 02154
Abstract :
The semiconductor Bi2S3 has a bandgap of 1.3 eV and reported mobilities of 200 cm2/V for holes and 1100 cm2/V for electrons. Its absorption cross section is 1.8 times that of Hg I2. We report compensation of this material to 107 to 109 Ω-cm and initial results on γ-ray detection properties.
Keywords :
Absorption; Bismuth; Charge carrier processes; Conductivity; Crystalline materials; Crystallization; Electron mobility; Furnaces; Photonic band gap; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1975.4327646
