Mechanism and Improvement of On-Resistance Degradation Induced by Avalanche Breakdown in Lateral DMOS Transistors

Author

Chen, Jone F. ; Lee, J.R. ; Wu, Kuo-Ming ; Huang, Tsung-Yi ; Liu, C.M.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan

Volume

55

Issue

8

fYear

2008

Firstpage

2259

Lastpage

2262

Abstract

On-resistance (R_on) degradation induced by avalanche breakdown is investigated in lateral double-diffused MOS transistors with different dosages of n-type drain drift (NDD) region. R_on degradation is caused by interface state and positive oxide-trapped charge created near the drain-side polygate edge. The device with a higher NDD dosage generates less interface state but more positive oxide-trapped charge, leading to a reduction in R_on degradation. Such a result reveals that increasing NDD dosage reduces avalanche-breakdown-induced R_on degradation.

Keywords

MOSFET; avalanche breakdown; avalanche breakdown; double-diffused MOS transistors; drain-side polygate edge; interface state; lateral DMOS transistors; n-type drain drift region; on-resistance degradation; positive oxide-trapped charge; Avalanche breakdown; CMOS technology; Charge pumps; Degradation; Doping; Hot carriers; Interface states; Intrusion detection; Low voltage; MOSFETs; Avalanche breakdown; lateral double-diffused MOS (LDMOS); reliability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.924866

Filename

4578836