Effects of boron diffusion in pMOSFETs with TiN-HfSiO gate stack

Author

Song, Seung-Chul ; Zhang, Zhibo ; Lee, Byoung Hun

Author_Institution

Sematech, Austin, TX, USA

Volume

26

Issue

6

fYear

2005

fDate

6/1/2005 12:00:00 AM

Firstpage

366

Lastpage

368

Abstract

Boron diffusion in TiN-HfSiO gate stack capped with polysilicon layer has been studied. SIMS analysis indicates that a significant amount of B diffused from B-doped polysilicon through TiN layer into nitrided HfSiO gate dielectrics. Grain boundaries in TiN thin film are considered a conduit of B into HfSiO. Even though most of B was stopped within HfSiO film owing to N incorporation, significant V_t shift and interface properties degradation were observed. It was found that B in HfSiO serves as positive charge and shifts pMOSFET V_t to negative side.

Keywords

MOSFET; boron; dielectric materials; diffusion; grain boundaries; hafnium compounds; interface phenomena; silicon compounds; titanium compounds; B; B-doped polysilicon; TiN-HfSiO; V_t shift; boron diffusion; grain boundaries; interface properties degradation; nitrided gate dielectrics; pMOSFET; polysilicon layer; positive charge; Boron; CMOS process; Degradation; Dielectric materials; Dielectric thin films; Hafnium; Leakage current; MOSFET circuits; Thermal stability; Tin; Boron; SIMS; TiN; hafnium; high-; metal gate; pMOSFET; silicate;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.848071

Filename

1432901