Title :
Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices
Author :
Shaneyfelt, M.R. ; Fleetwood, D.M. ; Schwank, J.R. ; Hughes, K.L.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
The radiation response of MOS devices exposed to 60Co and low-energy (~10 keV) X-ray irradiation is evaluated as a function of electric field during exposure. Improved charge yield estimates are obtained for 60Co irradiations at fields below 1 MV/cm by matching voltage shifts due to oxide-trap and interface-trap charge to an E-0.55 electric field dependence. Combining these improved charge yield estimates and calculated dose enhancement factors, the relative response of X-ray to 60Co irradiations is accurately predicted for oxide electric fields from 0.03 MV/cm to 5.0 MV/cm. The ability to predict the relative response to X-ray to 60Co irradiations-should speed acceptance of X-ray testers as a hardness assurance tool
Keywords :
X-ray effects; electron-hole recombination; gamma-ray effects; insulated gate field effect transistors; interface electron states; semiconductor device testing; 10 keV; MOS devices; MOS transistors; X-ray irradiation; X-ray testers; charge yield; dose enhancement factors; electric field dependence; electron hole recombination; gamma irradiation; hardness assurance tool; interface-trap charge; oxide-trap; radiation response; voltage shifts; Annealing; Costs; Ionizing radiation; Isolation technology; Laboratories; MOS devices; Spontaneous emission; Testing; Voltage; Yield estimation;
Journal_Title :
Nuclear Science, IEEE Transactions on
