Title :
High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric
Author :
Hung, B.F. ; Chiang, K.C. ; Huang, C.C. ; Chin, Albert ; McAlister, S.P.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fDate :
6/1/2005 12:00:00 AM
Abstract :
We have integrated a high-κ LaAlO3 dielectric into low-temperature poly-Si (LTPS) thin-film transistors (TFTs). Good TFT performance was achieved-such as a high drive current, low threshold voltage and subthreshold slope, as well as an excellent on/off current ratio and high gate-dielectric breakdown field. This was achieved without hydrogen passivation or special crystallization steps. The good performance is related to the high gate capacitance density and small equivalent-oxide thickness provided by the high-κ dielectric.
Keywords :
dielectric materials; electric breakdown; lanthanum compounds; thin film transistors; LaAlO3; equivalent-oxide thickness; gate capacitance density; gate dielectric; gate-dielectric breakdown field; high-k dielectric; high-performance poly-silicon TFT; low-temperature thin-film transistors; on-off current ratio; threshold voltage; Active matrix liquid crystal displays; Capacitance; Circuits; Crystallization; Dielectric devices; Dielectric substrates; Liquid crystal displays; Low voltage; Thin film transistors; Threshold voltage; High-; LaAlO; thin-film transistors (TFTs); threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.848622
