Title :
Neutron damage equivalence in GaAs
Author :
Griffin, P.J. ; Kelly, J.G. ; Luera, T.F. ; Barry, A.L. ; Lazo, M.S.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
A 1-MeV neutron damage equivalence methodology and damage function have been developed for GaAs based on a recoil-energy dependent damage efficiency and the displacement kerma. This method, developed using lifetime degradationIn GaAs LEDs in a variety of neutron spectra, is also shown to be applicable to carrier removal. A validated methodology, such as this, is required to ensure and evaluate simulation fidelity in the neutron testing of GaAs semiconductors
Keywords :
III-V semiconductors; gallium arsenide; light emitting diodes; neutron effects; semiconductor device testing; 1 MeV; GaAs; LEDs; carrier removal; damage function; displacement kerma; lifetime degradation; neutron damage equivalence methodology; neutron testing; recoil-energy dependent damage efficiency; simulation fidelity; Current measurement; Electronic equipment testing; Frequency measurement; Gallium arsenide; Inductors; Light emitting diodes; Neutrons; Semiconductor device testing; Semiconductor diodes; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
