Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETs

Author

Hariharan, Venkatnarayan ; Vasi, Juzer ; Rao, Valipe Ramgopal

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai

Volume

55

Issue

8

fYear

2008

Firstpage

2173

Lastpage

2180

Abstract

A drain current model is developed for a symmetrically driven undoped (or lightly doped) symmetric double-gate MOSFET (SDGFET) under the drift-diffusion transport mechanism, with velocity saturation effects being included as an integral part of the model derivation. Velocity saturation effects are modeled by using the Caughey-Thomas engineering model with exponent n = 2. I_d-V_d, I_d-V_g, g_m -V_g, and g_DS-V_d comparisons are made with 2-D device simulation results, and a very good match is found all the way from subthreshold to strong inversion. Gummel symmetry compliance is also shown.

Keywords

MOSFET; semiconductor device models; 2-D device simulation; Caughey-Thomas engineering model; Gummel symmetry; drain current model; drift-diffusion transport; symmetric double-gate MOSFET; velocity saturation; Capacitance; Doping; Electrodes; Electrons; Electrostatics; MOSFETs; Permittivity; Semiconductor process modeling; Silicon; Voltage; Current; MOSFETs; double-gate MOSFET (DGFET); mobility; modeling; velocity saturation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.926745

Filename

4578848