Temperature dependent efficiency and modulation characteristics of Al-free 980-nm laser diodes

Author

Nabiev, Rashit F. ; Vail, E.C. ; Chang-Hasnain, Constance J.

Author_Institution

E.L. Ginzton Lab., Stanford Univ., CA, USA

Volume

1

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

234

Lastpage

243

Abstract

Temperature dependent efficiency and modulation characteristics of strained quantum-well (QW) InGaAs-InGaAsP-InGaP 980-nm laser diodes of various designs are analyzed using self consistent carrier transport analysis including stimulated emission. The decrease of the differential efficiency of 980-nm laser diodes with temperature is found to be caused by an increased modal loss attributed to the free carrier (electron and hole) absorption. The obtained results agree well with experimentally observed increase of internal loss at higher temperatures. Modulation characteristics are determined mainly by drift-diffusion in separate confinement region along with processes of carrier capture and escape in QWs. At high temperatures modulation bandwidth is reduced because of the decrease in differential gain. Graded index separate confinement heterostructure and multi-QW lasers show superior efficiency and modulation behavior at high temperatures

Keywords

III-V semiconductors; carrier mobility; diffusion; gallium arsenide; gallium compounds; gradient index optics; indium compounds; optical modulation; quantum well lasers; stimulated emission; 980 nm; Al-free 980-nm laser diodes; InGaAs-InGaAsP-InGaP; InGaAs-InGaAsP-InGaP 980-nm laser diodes; carrier capture; carrier escape; differential efficiency; drift-diffusion; free carrier absorption; graded index separate confinement heterostructure; high temperatures; high temperatures modulation bandwidth; increased modal loss; internal loss; modulation behavior; modulation characteristics; multi-QW lasers; self consistent carrier transport analysis; separate confinement region; stimulated emission; strained quantum-well; temperature dependent efficiency; Absorption; Charge carrier processes; Diode lasers; Fiber lasers; Optical waveguides; Pump lasers; Quantum well lasers; Semiconductor lasers; Stimulated emission; Temperature dependence;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.401202

Filename

401202