DocumentCode :
816122
Title :
Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial
Layer Between
. On the other hand, when the SiO<sub>2</sub> layer is 2.0 nm, the field-effect mobility drastically reduces to 40 cm<sup>2</sup>/ (V ldr s), which is most likely due to the high interface trap density as seen in conventional SiO<sub>2</sub>/SiC MOSFETs.</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>aluminium compounds; electron mobility; oxidation; power MOSFET; semiconductor epitaxial layers; silicon compounds; SiC-SiO<sub>2</sub>-Al<sub>2</sub>O<sub>3</sub>; aluminum oxide; channel mobility; electron mobility; field-effect mobility; interface trap density; interfacial layer; power MOSFET; silicon carbide; size 2 nm; temperature 600 C; temperature 800 C; thermal oxidation; Aluminum oxide; Atmosphere; Insulation; Interface states; MOSFETs; Oxidation; Silicon carbide; Substrates; Thermal conductivity; Thermal resistance; Aluminum oxide; MOSFETs; power MOSFETs; silicon carbide;</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fLanguage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>English</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Journal_Title : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Electron Devices, IEEE Transactions on</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Publisher : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>ieee</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>ISSN : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>0018-9383</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Type : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>jour</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>DOI : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>10.1109/TED.2008.926647</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Filename : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>4578849</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Link To Document : </div><div class='valueDiv leftDirection leftAlign fullRecValueEnglish col-xs-8 col-sm-10'><a href='https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=816122' target='_blank'>https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=816122</a></div>
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