Violet Electroluminescence of AlInGaN–InGaN Multiquantum-Well Light-Emitting Diodes: Quantum-Confined Stark Effect and Heating Effect

Author

Li, Jun ; Shi, S.L. ; Wang, Y.J. ; Xu, S.J. ; Zhao, D.G. ; Zhu, J.J. ; Yang, H. ; Lu, F.

Author_Institution

Dept. of Phys., Fudan Univ., Shanghai

Volume

19

Issue

10

fYear

2007

fDate

5/15/2007 12:00:00 AM

Firstpage

789

Lastpage

791

Abstract

Electroluminescence (EL) from AlInGaN-InGaN multiquantum-well violet light-emitting diodes is investigated as a function of forward bias. Two distinct regimes have been identified: 1) quantum-confined Stark effect at low and moderately high forward biases; 2) heating effect at high biases. In the different regimes, the low-temperature EL spectra exhibit different spectral features which are discussed in detail

Keywords

electroluminescence; electroluminescent devices; light emitting diodes; quantum confined Stark effect; quantum well devices; AlInGaN-InGaN; AlInGaN-InGaN multiquantum-well light-emitting diodes; EL spectra; heating effect; quantum-confined Stark effect; Commercialization; Diode lasers; Electroluminescence; Heating; Laboratories; Light emitting diodes; Physics; Semiconductor diodes; Stark effect; Temperature measurement; AlInGaN; InGaN; electroluminescence (EL); light-emitting diodes (LEDs); multiple quantum wells (QWs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.896575

Filename

4162566