Title :
Improvement of Reliability of GaN-Based Light-Emitting Diodes by Selective Wet Etching With p-GaN
Author :
Ha, Ga-Young ; Park, Tae-Young ; Kim, Ja-Yeon ; Kim, Dong-Joon ; Min, Kyeong-Ik ; Park, Seong-Ju
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol.
fDate :
6/1/2007 12:00:00 AM
Abstract :
In an attempt to enhance the reliability of GaN-based light-emitting diodes (LEDs), the selective wet chemical etching of p-GaN surface in the GaN-based LEDs using KOH+NaOH in an ethylene glycol solution was investigated. The leakage currents of the etched LED under forward and reverse bias voltages were much lower, compared to those of a nonetched LED. The etched LED also showed improved light extraction efficiency and the degradation rate of light output power at a high injection current of 300 mA was slower than that for a nonetched LED. These results can be attributed to a decrease in the surface defects, an increase in hole concentration, and the increased surface roughness of the etched p-GaN
Keywords :
III-V semiconductors; etching; gallium compounds; light emitting diodes; semiconductor device reliability; surface roughness; 300 mA; GaN; GaN-based light-emitting diodes; KOH+NaOH chemical treatment; ethylene glycol solution; forward bias voltage; hole concentration; leakage currents; light degradation rate; light extraction efficiency; p-GaN surface; reliability; reverse bias voltage; selective wet etching; surface defects; surface roughness; Anti-freeze; Chemicals; Degradation; Leakage current; Light emitting diodes; Power generation; Rough surfaces; Surface roughness; Voltage; Wet etching; GaN; leakage currents; light output power; light-emitting diodes (LEDs); selective wet etching;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.897291
