• DocumentCode
    816204
  • Title

    Multiple wavelength vertical-cavity laser array employing molecular beam epitaxy regrowth

  • Author

    Wipiejewski, T. ; Ko, J. ; Thibeault, B.J. ; Coldren, L.A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    32
  • Issue
    4
  • fYear
    1996
  • fDate
    2/15/1996 12:00:00 AM
  • Firstpage
    340
  • Lastpage
    342
  • Abstract
    Multiple wavelength 4×2 vertical cavity laser diode arrays with 30 μm pitch exhibit a 17 nm wavelength span. The wavelength distribution is arbitrary within the 2-D array. The laser elements feature singlemode emission with submilliamp threshold currents
  • Keywords
    molecular beam epitaxial growth; optical communication equipment; semiconductor growth; semiconductor laser arrays; surface emitting lasers; 2D array; 30 micron; laser elements; molecular beam epitaxy regrowth; multiple wavelength laser; singlemode emission; submilliamp threshold currents; vertical-cavity laser array; wavelength distribution; wavelength span;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960198
  • Filename
    490958
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=816204