Fullband quantization analysis reveals a third valley in [001] silicon inversion layers

Author

Esseni, David ; Palestri, Pierpaolo

Author_Institution

DIEGM, Udine, Italy

Volume

26

Issue

6

fYear

2005

fDate

6/1/2005 12:00:00 AM

Firstpage

413

Lastpage

415

Abstract

This letter presents calculations of the silicon two-dimensional (2-D) band structure obtained by accounting for the fullband energy dispersion of the three-dimensional silicon crystal, as derived from the non-local-pseudopotential method. The most interesting result is the identification of a third valley for the 2-D electron gas in the [001] quantization direction, besides the two families of subbands (the unprimed and primed ones) universally considered according to the effective mass approximation.

Keywords

MOSFET; elemental semiconductors; inversion layers; semiconductor device models; silicon; two-dimensional electron gas; 001 quantization direction; 2D density of states; 2D electron gas; 3D silicon crystal; MOSFET; Si; effective mass approximation; full band energy dispersion; fullband quantization analysis; nonlocal-pseudopotential method; quantization models; silicon 2D band structure; silicon inversion layers; Effective mass; Eigenvalues and eigenfunctions; Electrons; Lattices; MOSFETs; Quantization; Scattering; Schrodinger equation; Silicon; Two dimensional displays; Effective mass approximation; MOSFETs; Silicon inversion layers; quantization models; two–dimensional (2-D) density of states (DOS);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.848126

Filename

1432916