Title :
0.98-μm InGaAs-InGaP strained quantum-well lasers with GaAs-InGaP superlattice optical confinement layer
Author :
Usami, M. ; Matsushima, Y. ; Takahashi, Y.
Author_Institution :
KDD Kamifukuoka R&D Labs., Saitama, Japan
fDate :
6/1/1995 12:00:00 AM
Abstract :
We have proposed a GaAs-InGaP superlattice optical confinement layer (SL-OCL), which replaces graded InGaAsP alloy layers in 0.98-μm InGaAs-InGaP graded-index separate-confinement-heterostructure (GRINSCH) strained quantum-well (QW) lasers. Theoretical study of the multiquantum barrier (MQB) effect of the GaAs-InGaP SL indicates that electrons in the GaAs OCL feel more than two times higher barrier height than the classical bulk barrier height. Actually, the increase of internal quantum efficiency and the decrease of threshold current density were confirmed. Furthermore, the extremely high characteristic temperature T 0 of 300 K around RT was obtained. These improvements of laser characteristics, especially high T0, is mainly owing to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; gradient index optics; indium compounds; quantum well lasers; semiconductor superlattices; 0.98 mum; 300 K; GRINSCH; GaAs-InGaP; GaAs-InGaP superlattice optical confinement layer; InGaAs-InGaP; InGaAs-InGaP graded-index separate-confinement-heterostructure; InGaAs-InGaP strained quantum-well lasers; MQB effect; barrier height; classical bulk barrier height; graded InGaAsP alloy layers; high characteristic temperature; internal quantum efficiency; laser characteristics; multiquantum barrier; threshold current density; Carrier confinement; Electrons; Fiber lasers; Gallium arsenide; Gas lasers; Laser noise; Optical superlattices; Quantum well lasers; Reflectivity; Waveguide lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.401203
