Title :
A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs From Intrinsic Channel to Heavily Doped Body
Author :
Liu, Feng ; He, Jin ; Zhang, Lining ; Zhang, Jian ; Hu, Jinghua ; Ma, Chenyue ; Chan, Mansun
Author_Institution :
Sch. of Electron. Eng. & Comput. Sci., Peking Univ., Beijing
Abstract :
A charge-based model is presented for long-channel cylindrical surrounding-gate (SRG) MOSFETs from an intrinsic channel to a heavily doped body. The model derivation is based on an accurate inversion charge solution of Poisson´s equation in a cylindrical coordinate system. The general drain-current equation is obtained from Pao-Sah´s dual integral, which is expressed as a function of inversion charge at the source and drain terminals. The model is valid for all regions of operation without employing any smoothing function. The model has been extensively verified by numerical simulations with a wide range of SRG MOSFET geometry parameters and channel doping concentrations, including the undoped channel.
Keywords :
MOSFET; Poisson equation; impurity distribution; semiconductor device models; Poisson equation; channel doping concentrations; charge-based model; cylindrical MOSFET; cylindrical coordinate system; drain-current equation; dual integral; heavily doped body; intrinsic channel; inversion charge solution; long-channel MOSFET; surrounding-gate MOSFET; Computer science; Doping; Helium; Integral equations; MOSFETs; Microelectronics; Numerical simulation; Poisson equations; Semiconductor process modeling; Smoothing methods; Compact model; device physics; doping concentration; drain current; surrounding-gate (SRG) MOSFET;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.926735
