• DocumentCode
    816371
  • Title

    Charge buildup at high dose and low fields in SIMOX buried oxides

  • Author

    Boesch, H. Edwin, Jr. ; Taylor, Thomas L. ; Brown, George A.

  • Author_Institution
    Harry Diamond Lab., Adelphi, MD, USA
  • Volume
    38
  • Issue
    6
  • fYear
    1991
  • fDate
    12/1/1991 12:00:00 AM
  • Firstpage
    1234
  • Lastpage
    1239
  • Abstract
    Trapped charge buildup was measured and modeled as a function of dose and applied oxide field, εox, for a representative SIMOX (separation by implantation of oxygen) buried oxide. The dominant physical processes controlling the buildup are shown to be space-charge-driven modification of εox and recombination of electrons with trapped holes in low-field regions of the oxide
  • Keywords
    electron beam effects; electron-hole recombination; hole traps; ion implantation; metal-insulator-semiconductor devices; semiconductor-insulator boundaries; space charge; BOX MOS capacitors; SIMOX buried oxides; SOI technology; Si-SiO2; Si:O; electron irradiation; high dose; low-field regions; space-charge-driven modification; trapped charge buildup; trapped hole electron recombination; Charge carrier processes; Charge measurement; Current measurement; Electron traps; Insulation; Particle measurements; Process control; Silicon on insulator technology; Space charge; Substrates;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.124098
  • Filename
    124098
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=816371