Title :
Performance of packaged near-traveling-wave semiconductor laser amplifier with multilongitudinal mode input
Author :
Evankow, J.D. ; Olsson, N.A. ; Ku, R.T.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
The results for a packaged 1.30- mu m InP/InGaAsP optical amplifier used to switch broadband multilongitudinal modes signals are presented. Despite the absence of optical isolators and even with the introduction of additional external reflections (R approximately=1.0%), the optical fiber-to-fiber gain is stable over a large temperature range at resonance ( Delta G>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; reflectivity; semiconductor junction lasers; 1.30 micron; 5.76 dB; III-V semiconductors; InP-InGaAsP; mode-partition noise; multilongitudinal modes; near-traveling-wave semiconductor laser amplifier; optical isolators; reflectivity; thermal stabilization period; Fiber lasers; Indium phosphide; Laser modes; Optical amplifiers; Pulse amplifiers; Resonance; Semiconductor device packaging; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Lightwave Technology, Journal of
