Title :
Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs
Author :
Nilsson, Per-Åke ; Allerstam, Fredrik ; Südow, Mattias ; Andersson, Kristoffer ; Hjelmgren, Hans ; Sveinbjornsson, E.O. ; Rorsman, Niklas
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg
Abstract :
The influence of field plates and surface traps on silicon carbide MESFETs for microwave operation was investigated. By increasing the length of gate-connected field plates from 50 to 800 nm, it was possible to increase the gate-drain breakdown voltage of the devices from 125 to 170 V. At the same time, the current slump effect of traps in the passivation oxide was reduced. By using a combination of field plates and a passivation oxide with low interface trap density, it was possible to reach an output power density of 8 W/mm at 3 GHz.
Keywords :
Schottky gate field effect transistors; silicon compounds; wide band gap semiconductors; SiC; current slump effect; frequency 3 GHz; gate-connected field plates; gate-drain breakdown voltage; interface trap density; microwave silicon carbide MESFET; passivation oxide; power density; surface traps; voltage 125 V to 170 V; Electron traps; Etching; MESFETs; Microwave devices; Microwave technology; Neodymium; Passivation; Power generation; Silicon carbide; Substrates; Field plate; MESFETs; passivation; silicon carbide (SiC); surface traps;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.926633
