Ultralow-Loss SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

Author

Nishio, Johji ; Ota, Chiharu ; Hatakeyama, Tetsuo ; Shinohe, Takashi ; Kojima, Kazutoshi ; Nishizawa, Shin-ichi ; Ohashi, Hiromichi

Author_Institution

Corp. R&D Center, Toshiba Corp., Kawasaki

Volume

55

Issue

8

fYear

2008

Firstpage

1954

Lastpage

1960

Abstract

We have applied the floating junction (FJ) structure, which has been confirmed to be effective in reducing the on-resistance of Si power devices, to SiC FJ Schottky barrier diodes (SiC Super-SBDs). Optimization of the device parameters, which are derived by making improvements in the device simulator, and development of the fabrication process have enabled realization of Super-SBDs with a breakdown voltage of 2700 V and a specific on-resistance of 2.57 mOmega ldr cm². These values correspond to the world record of 11.3 GW/cm² for Baliga´s figure-of-merit (BFOM = 4V_bd ²/R_on-sp).

Keywords

Schottky barriers; Schottky diodes; electric breakdown; electric resistance; silicon compounds; wide band gap semiconductors; Baliga figure-of-merit; Schottky barrier diodes; SiC; breakdown voltage; floating junction; on-resistance; power devices; voltage 2700 V; Commercialization; Design optimization; Epitaxial growth; Fabrication; Impurities; Numerical simulation; Schottky barriers; Schottky diodes; Silicon carbide; Voltage; 4H-SiC; Figure-of-merit (FOM); Schottky barrier diode (SBD);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.926666

Filename

4578872