Title :
Room-temperature continuous-wave operation of blue-green CdZnSSe/ZnSSe quantum well laser diodes
Author :
Law, K.K. ; Baude, P.F. ; Miller, T.J. ; Haase, M.A. ; Haugen, G.M. ; Smekalin, K.
Author_Institution :
Photonics Res. Lab., 3M Center, St. Paul, MN, USA
fDate :
2/15/1996 12:00:00 AM
Abstract :
Room temperature continuous wave operation of CdZnSSe/ZnSSe quantum well laser diodes based on wide-gap II-VI semiconductors with lifetimes >3 h has been demonstrated. The density of stacking faults and threading dislocations present inside the laser diodes is ~5×104/cm2. Laser emission was observed at a wavelength of ~529 nm with a threshold current density of ~460 A/cm2 and a threshold voltage of ~5 V in index-guided CdZnSSe/ZnSSe/MgZnSSe separate-confinement heterostructure laser diodes
Keywords :
II-VI semiconductors; cadmium compounds; dislocation density; quantum well lasers; wide band gap semiconductors; zinc compounds; 5 V; 529 nm; CdZnSSe-ZnSSe; quantum well laser diodes; room-temperature continuous-wave operation; separate-confinement heterostructure; stacking fault density; threading dislocation density; threshold current density; threshold voltage; wide-gap II-VI semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960249
