Thermal annealing of trapped holes in SIMOX buried oxides

Author

Pennise, Christine A. ; Boesch, H. Edwin, Jr.

Author_Institution

Harry Diamond Lab., Adelphi, MD, USA

Volume

38

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1240

Lastpage

1246

Abstract

The thermal detrapping of radiation-generated trapped holes in SIMOX (separation by implantation of oxygen) buried oxides has been investigated with an isothermal anneal experiment. Recovery from the radiation damage exhibits Arrhenius behavior; the recovery times vary exponentially as a function of inverse temperature. Activation energies range from about 0.45 to 1.65 eV, indicating probable thermal detrapping of holes from a broad distribution in hole trap depths. The high activation energies are an indication that some of the holes are deeply trapped in the oxide

Keywords

X-ray effects; annealing; hole traps; ion implantation; metal-insulator-semiconductor devices; photoconductivity; semiconductor-insulator boundaries; Arrhenius behavior; MOS BOX capacitors; SIMOX buried oxides; SOI technology; Si-SiO₂; Si:O; X-ray irradiation; high activation energies; hole trap depths; isothermal anneal; photoconduction current; radiation damage; radiation-generated trapped holes; recovery times; thermal detrapping; Annealing; Capacitance-voltage characteristics; Isothermal processes; MOS capacitors; Monitoring; Photoconductivity; Radiation effects; Silicon on insulator technology; Temperature; Tunneling;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.124099

Filename

124099